IDV05S60C Infineon Technologies, IDV05S60C Datasheet - Page 8

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IDV05S60C

Manufacturer Part Number
IDV05S60C
Description
DIODE SCHOTTKY 600V 5A TO220
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDV05S60C

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.7V @ 5A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
5A (DC)
Current - Reverse Leakage @ Vr
70µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
240pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
5A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
44A
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
5.0 A
Qc (typ)
12.0 nC
Package
TO-220 FullPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDV05S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
2nd Generation thinQ!™ SiC Schottky Diode
IDV05S60C
Electrical characteristics diagrams
Table 11
Typ. C stored energy
E
=f(V
)
C
R
Final Data Sheet
8
Rev. 2.0, 2010-01-08

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