IDH06S60C Infineon Technologies, IDH06S60C Datasheet - Page 4

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IDH06S60C

Manufacturer Part Number
IDH06S60C
Description
DIODE SCHOTTKY 600V 6A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH06S60C

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.7V @ 6A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
6A (DC)
Current - Reverse Leakage @ Vr
80µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
280pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
6A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
49A
Operating
RoHS Compliant
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
6.0 A
Qc (typ)
15.0 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IDT06S60C
IDT06S60C
IDT06S60CX
IDT06S60CXK
SP000096442
SP000657978

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDH06S60C
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
=f(I
10
10
30
25
20
15
10
5
0
-1
-2
1
0
10
p
0
F
)
), T
-5
0.01
0.05
0.02
single pulse
0.1
0.2
C
=100 °C, parameter: D =t
0.5
p
/T
10
0.1
-4
0.2
5
0.5
I
F(AV)
t
10
P
[s]
-3
[A]
1
10
10
p
/T
-2
10
page 4
15
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
400
300
200
100
10
10
10
10
10
R
R
0
-1
-2
-3
1
0
); T
10
)
100
-1
C
150 °C
=25 °C, f =1 MHz
j
-55 °C
200
175 °C
25 °C
10
0
100 °C
300
V
V
10
R
R
[V]
[V]
1
400
10
IDH06S60C
2
500
2009-06-02
10
600
3

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