IDH08S60C Infineon Technologies, IDH08S60C Datasheet - Page 5

• Manufacturer Part Number: IDH08S60C
• Description: DIODE SCHOTTKY 600V 8A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH08S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 310pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1.7V
• Forward Surge Current Ifsm Max: 59A
• Operating Temperature Range: -55°C To +175°C
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 8.0 A
• Qc (typ): 19.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT08S60C; IDT08S60C; IDT08S60CX; IDT08S60CXK; SP000080226; SP000657994

Rev. 2.0
9 Typ. C stored energy
E
C
=f(V
10
8
6
4
2
0
R
)
0
100
200
V
300
R
[V]
400
500
600
page 5
10 Typ. capacitance charge vs. current slope
Q
C
=f(di
20
15
10
5
0
100
F
/dt )
4)
; T
j
=150 °C; I
400
di
F
/dt [A/µs]
F
≤I
F,max
700
IDH08S60C
2009-06-02
1000