BAV19 Fairchild Semiconductor, BAV19 Datasheet
BAV19
Manufacturer Part Number
BAV19
Description
DIODE GEN PURP 120V 200MA DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAV19_T50R.pdf
(4 pages)
Specifications of BAV19
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 100V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
120 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA at 100 V
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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2001 Fairchild Semiconductor Corporation
Small Signal Diode
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Maximum Repetitive Reverse Voltage
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
BAV19 / 20 / 21
Parameter
Parameter
T
A
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
= 25°C unless otherwise noted
Color Band Denotes Cathode
T
A
= 25°C unless otherwise noted
I
I
I
I
I
V
V
V
V
V
V
V
I
R
R
R
R
F
F
F
DO-35
R
R
R
R
R
R
R
L
= 100 mA
= 200 mA
= I
= 100 A
= 100 A
= 100 A
= 100
= 100 V
= 100 V, T
= 150 V
= 150 V, T
= 200 V
= 200 V, T
= 0, f = 1.0 MHz
R
Test Conditions
= 30 mA, I
A
A
A
= 150 C
= 150 C
= 150 C
RR
= 3.0 mA,
BAV19
BAV20
BAV21
-65 to +200
Value
Value
Min
120
200
250
120
200
250
200
175
500
300
1.0
4.0
Max
1.25
100
100
100
100
100
100
1.0
5.0
50
Units
Units
BAV19/20/21, Rev. C
mW
mA
C/W
Units
V
V
V
A
A
C
C
nA
nA
nA
pF
ns
V
V
V
V
V
A
A
A
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BAV19 Summary of contents
Page 1
... Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T t Reverse Recovery Time rr 2001 Fairchild Semiconductor Corporation BAV19 / DO-35 Color Band Denotes Cathode T = 25°C unless otherwise noted A Parameter BAV19 BAV20 BAV21 Parameter T = 25°C unless otherwise noted A Test Conditions ...
Page 2
... Figure 4. Forward Voltage vs Forward Current 1.4 ° Ta 1.3 1.2 1.1 1.0 0.9 0.8 0 Figure 6. Forward Voltage vs Forward Current Small Signal Diode (continued) 100 R everse Voltage 205 100 Forward Current, I [uA 1.0 to 100uA 30 50 100 200 300 500 800 Forward Current, I [mA 800mA BAV19/20/21, Rev. C ...
Page 3
... Figure 8. Total Capacitance 400 300 200 100 0 3.0 0 [mA] Figure 10. Average Rectified Current (I versus Ambient Temperature (T DO-35 Pkg 50 100 150 Average Temperature Small Signal Diode (continued Reverse Voltage [V] 50 100 150 Ambient Temperature F(AV 200 BAV19/20/21, Rev. C ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...