SDD04S60 Infineon Technologies, SDD04S60 Datasheet - Page 2

• Manufacturer Part Number: SDD04S60
• Description: DIODE SCHOTTKY 600V 4A D-PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDD04S60

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 150pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 12.5 A
• Configuration: Single
• Forward Voltage Drop: 1.9 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 13.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDD04S60XT; SP000077602

1 CCM, V
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
PG-TO252-3-1: @ min. footprint
PG-TO252-3-1: @ 6 cm
Electrical Characteristics, at T
Parameter
Static Characteristics
Diode forward voltage
I
I
Reverse current
V
V
Rev. 2.4
F
F
R
R
=4A, T
=4A, T
=600V, T
=600V, T
j
j
IN
=25°C
=150°C
= 85VAC, T
j
j
=25°C
=150°C
j
= 150°C, T
2
cooling area
C
=100°C, η = 93%, ∆ I IN = 30%
2)
j
= 25 °C, unless otherwise specified
Page 2
Symbol
R
R
R
Symbol
V
I
R
F
thJC
thJA
thJA
min.
min.
-
-
-
-
SDP04S60, SDD04S60
-
-
-
-
Values
Values
typ.
typ.
1.7
15
40
2
-
-
-
-
max.
max.
1000
200
4.1
1.9
2.4
SDT04S60
62
75
50
2007-09-10
Unit
K/W
Unit
V
µA