SDT05S60 Infineon Technologies, SDT05S60 Datasheet
SDT05S60
Specifications of SDT05S60
SDT05S60XK
SP000014671
Related parts for SDT05S60
SDT05S60 Summary of contents
Page 1
... Symbol I =100° Page 1 thinQ! SiC Schottky Diode Product Summary V RRM PG-TO220-2-2. Marking Pin 1 Pin 2 D05S60 C Value 5 F 7.1 FRMS 18.5 FSM 21 FRM 50 FMAX 1 600 RRM 600 RSM 43 tot T -55... +175 j , stg SDT05S60 SDT05S60 V 600 Unit A A² °C 2008-06-02 ...
Page 2
... T =150° Reverse current =600V, T =25° =600V, T =150° Rev. 2.2 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol Page 2 SDT05S60 SDT05S60 Values Unit min. typ. max 3.5 K Values Unit min. typ. max 1.5 1.7 - 1.7 2.1 µ 200 - 45 ...
Page 3
... F F Switching time =400V, I =5A /dt=200A/µ Total capacitance =1V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDT05S60 SDT05S60 Values Unit min. typ. max n 170 - - 2008-06-02 ...
Page 4
... Rev. 2.2 2 Diode forward current = parameter 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 °C 190 Typ. forward power dissipation vs. average forward current P F(AV d=1 d=0.5 20 d=0.2 d=0 2 Page 4 SDT05S60 SDT05S60 ≤ 175 ° 100 120 140 ° =100° F(AV) 2008-06-02 180 10 ...
Page 5
... Typ. capacitance vs. reverse voltage parameter ° MHz C 200 pF 150 125 100 Rev. 2.2 6 Transient thermal impedance thJC parameter : K 600 Typ. C stored energy µJ 2 1 Page 5 SDT05S60 SDT05S60 ) SDT05S60 single pulse - 100 200 300 400 2008-06- 0.50 0.20 0.10 0.05 0.02 0. 600 V R ...
Page 6
... Typ. capacitive charge vs. current slope / parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDT05S60 SDT05S60 2008-06-02 ...
Page 7
... PG-TO-220-2-2 Rev. 2.2 Page 7 SDT05S60 SDT05S60 2008-06-02 ...
Page 8
... Rev. 2.2 Page 8 SDT05S60 SDT05S60 2008-06-02 ...