FGH20N60SFDTU Fairchild Semiconductor, FGH20N60SFDTU Datasheet - Page 4

• Manufacturer Part Number: FGH20N60SFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60SFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60SFD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
60
40
20
60
40
20
0
0
4
3
2
1
0.0
25
0
T
Common Emitter
V
T
T
Common Emitter
V
C
Collector-Emitter Case Temperature, T
C
C
GE
GE
= 25
Characteristics
Temperature at Variant Current Level
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
o
C
o
1
C
1.5
50
2
15V
20V
3.0
75
3
12V
V
I
C
GE
40A
20A
4.5
= 10A
100
CE
CE
= 8V
10V
[V]
4
[V]
C
[
o
C]
6.0
125
5
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
60
40
20
60
40
20
20
16
12
0
0
8
4
0
0.0
4
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
o
Collector-Emitter Voltage, V
o
C
o
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
I
1.5
C
6
20A
= 10A
8
3.0
15V
8
40A
20V
12
Common Emitter
T
C
GE
V
= -40
GE
GE
4.5
10
CE
[V]
[V]
12V
= 8V
16
o
[V]
C
10V
GE
www.fairchildsemi.com
6.0
12
20