FGA15N120FTDTU Fairchild Semiconductor, FGA15N120FTDTU Datasheet - Page 7

• Manufacturer Part Number: FGA15N120FTDTU
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA15N120FTD Rev. A
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 21.Reverse Recovery Time
800
600
400
200
40
30
20
10
0
5
5
10
10
Forward Current, I
Forward Current, I
di/dt = 100A/
1E-3
15
15
0.01
0.1
1
1E-5
µ
0.5
single pulse
0.2
0.1
0.05
0.02
0.01
s
200A/
200A/
di/dt = 100A/
20
20
F
F
µ
µ
[A]
s
[A]
s
Figure 22.Transient Thermal Impedance of IGBT
µ
1E-4
25
25
s
Rectangular Pulse Duration [sec]
30
30
1E-3
Figure 20. Stored Charge
7
14000
12000
10000
8000
6000
4000
2000
0.01
0
5
Duty Factor, D = t1/t2
Peak T
P
DM
10
Forward Current, I
j
= Pdm x Zthjc + T
0.1
t
1
t
2
15
200A/
di/dt = 100A/
µ
s
20
C
1
F
[A]
µ
s
25
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30