FGH75N60SFTU Fairchild Semiconductor, FGH75N60SFTU Datasheet - Page 4

• Manufacturer Part Number: FGH75N60SFTU
• Description: IGBT N-CH 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH75N60SFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 75A
• Current - Collector (ic) (max): 150A
• Power - Max: 452W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 150 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH75N60SF Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
7000
6000
5000
4000
3000
2000
1000
0.01
500
100
0.1
20
16
12
10
8
4
0
0
1
0
1
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
75A
C
C
C
10
oes
ies
res
I
C
= 40A
8
150A
12
Common Emitter
V
T
GE
C
Common Emitter
T
100
10
C
= 25
= 0V, f = 1MHz
GE
= 25
CE
o
[V]
CE
GE
[V]
C
o
16
100
C
10 ms
[V]
1ms
DC
10
µ
µ
s
s
1000
20
30
4
Figure 12. Load Current vs. Frequency
Figure 10. Gate charge Characteristics
140
120
100
Figure 8. Saturation Voltage vs. V
80
60
40
20
20
16
12
15
12
8
4
0
9
6
3
0
1
0
0
Duty cycle : 50%
T
Powe Dissipation = 181W
C
Common Emitter
T
C
= 100
= 25
o
o
50
C
C
4
Gate-Emitter Voltage, V
75A
Gate Charge, Q
Frequency [kHz]
10
I
V
load Current : peak of square wave
C
CC
= 40A
100
8
= 400V
V
150
CC
200V
12
g
100
= 100V
[nC]
Common Emitter
T
150A
C
GE
= 125
[V]
200
16
300V
o
C
www.fairchildsemi.com
GE
1000
250
20