APT35GP120BG Microsemi Power Products Group, APT35GP120BG Datasheet
APT35GP120BG
Manufacturer Part Number
APT35GP120BG
Description
IGBT 1200V 96A 543W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT35GP120BG.pdf
(6 pages)
Specifications of APT35GP120BG
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 35A
Current - Collector (ic) (max)
96A
Power - Max
543W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GP120BGMI
APT35GP120BGMI
APT35GP120BGMI
Available stocks
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Part Number
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Price
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
(V
Microsemi Website - http://www.microsemi.com
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 100 kHz operation @ 800V, 14A
• 50 kHz operation @ 800V, 25A
• RBSOA rated
C
C
C
GE
GE
= 25°C
= 25°C
= 110°C
= 15V, I
= 15V, I
, I
= ±20V)
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
= 35A, T
= 35A, T
= 0V, T
= 0V, T
IGBT
j
C
= 25°C)
= 250µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
*
G Denotes RoHS Compliant, Pb Free Terminal Finish.
2
2
C
= 25°C unless otherwise specified.
1200
MIN
APT35GP120BG
3
APT35GP120B(G)
140A @ 960V
-55 to 150
G
TYP
1200
4.5
3.3
±20
±30
140
543
300
C
3
96
46
E
TO-247
2500
±100
MAX
250
3.9
6
G
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E
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APT35GP120BG Summary of contents
Page 1
... I = 35A 125° 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT35GP120BG G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 25°C unless otherwise specified. C APT35GP120B(G) 1200 ±20 ± 140 140A @ 960V 543 -55 to 150 300 MIN TYP MAX ...
Page 2
Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Reverse Bias Safe ...
Page 3
15V. 250µs PULSE TEST 70 <0.5 % DUTY CYCLE =25° =125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output ...
Page 4
V = 10V 15V 600V 25°C, T =125° 5Ω 100 µ ...
Page 5
V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 SINGLE PULSE 0. ...
Page 6
APT30DF120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 Collector Voltage 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Microsemi’s products are covered by ...