APT35GP120BG Microsemi Power Products Group, APT35GP120BG Datasheet - Page 2

• Manufacturer Part Number: APT35GP120BG
• Description: IGBT 1200V 96A 543W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120BGMI; APT35GP120BGMI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
RBSOA
V
R
R
C
t
t
t
t
E
E
E
E
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
Q
GEP
ΘJC
ΘJC
on1
on2
off
on1
on2
on1
on2
oes
t
t
t
t
res
ies
off
off
ge
gc
r
f
r
f
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
4
4
6
5
5
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
T
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
R
I
R
J
GE
GE
GE
C
C
C
= +125°C
= +25°C
G
G
= 35A
= 35A
= 35A
= 600V
= 600V
= 600V
= 15V
= 15V
= 15V
= 5Ω
= 5Ω
G
CE
= 5Ω, V
CE
= 25V
= 960V
GE
=
MIN
140
MIN
3240
1305
2132
1744
TYP
TYP
248
150
750
680
147
750
7.5
31
21
62
16
20
94
40
16
20
75
MAX
MAX
5.90
N/A
.23
UNIT
°C/W
UNIT
gm
pF
nC
ns
µ
ns
µ
V
A
J
J