APT35GP120BG Microsemi Power Products Group, APT35GP120BG Datasheet - Page 5

• Manufacturer Part Number: APT35GP120BG
• Description: IGBT 1200V 96A 543W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120BGMI; APT35GP120BGMI

10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Dissipated Power
0.05
0.3
0.5
0.9
0.7
0.1
20
(Watts)
10
180
100
50
10
30
-4
7
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
Figure 20, Operating Frequency vs Collector
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 5 Ω
= 800V
40
20
°
I
°
C
C
C
RECTANGULAR PULSE DURATION (SECONDS)
SINGLE PULSE
, COLLECTOR CURRENT (A)
C ies
C oes
C res
T
J
30
50
( C)
0.0108
10
Current
0.0896
40
-3
50
0.228
0.140
60
T
C
( C)
70
10
160
140
120
100
-2
80
60
40
20
f
f
F
P
0
max1
max 2
max
diss
Figure 18, Reverse Bias Safe Operating Area
0 100 200 300 400 500 600 700 800 900 1000
V
=
=
CE
=
=
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
min(f
T
, COLLECTOR TO EMITTER VOLTAGE
EXT
t
P
E
J
R
d (on )
diss
on 2
−
θ
are the external thermal
JC
T
−
max1
+
+
C
P
E
t
cond
r
0.05
, f
off
+
max 2
Note:
t
d(off )
Peak T J = P DM x Z θJC + T C
10
)
Duty Factor D = t 1 / t
-1
+
t
f
t 1
t 2
APT35GP120B(G)
2
1.0