APT35GP120B2DQ2G Microsemi Power Products Group, APT35GP120B2DQ2G Datasheet

IGBT 1200V 96A 543W TMAX

APT35GP120B2DQ2G

Manufacturer Part Number
APT35GP120B2DQ2G
Description
IGBT 1200V 96A 543W TMAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT35GP120B2DQ2G.pdf (9 pages)

Specifications of APT35GP120B2DQ2G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 35A
Current - Collector (ic) (max)
96A
Power - Max
543W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GP120B2DQ2GMI
APT35GP120B2DQ2GMI
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• RBSOA Rated
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 35A, T
= 35A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 350µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT35GP120B2DQ2(G)
1200
APT35GP120B2DQ2G*
APT35GP120B2DQ2
MIN
3
140A @ 960V
-55 to 150
APT35GP120B2DQ2(G)
1200
±30
140
543
300
TYP
96
46
4.5
3.3
3
1200V
G
G
C
E
3000
MAX
±100
350
3.9
6
T-Max
®
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT35GP120B2DQ2G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT35GP120B2DQ2(G) APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. T-Max 25°C unless otherwise specified. C APT35GP120B2DQ2(G) 1200 ± 140 140A @ 960V 543 -55 to 150 300 MIN TYP MAX ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 120 ...

Page 4

V = 15V 600V 25°C or 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. ...

Page 6

APT40DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Gate Voltage T = 125 °C J Collector Voltage ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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