APT35GP120B2DQ2G Microsemi Power Products Group, APT35GP120B2DQ2G Datasheet - Page 9

• Manufacturer Part Number: APT35GP120B2DQ2G
• Description: IGBT 1200V 96A 543W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120B2DQ2GMI; APT35GP120B2DQ2GMI

TYPICAL PERFORMANCE CURVES
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
T-MAX
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
and t rr .
e1 SAC: Tin, Silver, Copper
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
®
(B2) Package Outline
di
F
/dt Adjust
1.01 (.040)
1.40 (.055)
(.177) Max.
5.45 (.215) BSC
Figure 32. Diode Test Circuit
4.50
2-Plcs.
30µH
15.49 (.610)
16.26 (.640)
Zero
V r
APT10035LLL
1
TRANSFORMER
PEARSON 2878
CURRENT
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitte
2
D.U.T.
3
APT35GP120B2DQ2(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM