APT35GP120B2DQ2G Microsemi Power Products Group, APT35GP120B2DQ2G Datasheet - Page 5

• Manufacturer Part Number: APT35GP120B2DQ2G
• Description: IGBT 1200V 96A 543W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120B2DQ2GMI; APT35GP120B2DQ2GMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Junction
temp. ( ºC)
1,000
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
(Watts)
Power
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
0.0896
0.140
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
0.0108
0.228
res
ies
oes
50
SINGLE PULSE
10
-3
180
100
Figure 20, Operating Frequency vs Collector Current
50
10
7
10
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
160
140
120
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
-2
80
60
40
20
20
0
°
°
I
C
C
C
0 100 200 300 400 500 600 700 800 900 1000
V
, COLLECTOR CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE
30
40
Note:
Peak T J = P DM x Z θJC + T C
10
Duty Factor D =
50
-1
t 1
APT35GP120B2DQ2(G)
60
t 2
t 1
70
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f