ISL9V3036D3ST Fairchild Semiconductor, ISL9V3036D3ST Datasheet - Page 4

• Manufacturer Part Number: ISL9V3036D3ST
• Description: IGBT N-CHAN 360V 300MJ TO-252AA
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V3036D3ST

• Voltage - Collector Emitter Breakdown (max): 360V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 4V, 6A
• Current - Collector (ic) (max): 21A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 7. Collector to Emitter On-State Voltage vs
10000
1000
100
Figure 11. Leakage Current vs Junction
0.1
Figure 9. DC Collector Current vs Case
10
25
25
20
15
10
20
15
10
1
5
0
5
0
25
0
-50
V
V
V
V
V
GE
GE
GE
GE
GE
-25
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
50
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Collector Current
T
0
1.0
J
T
, JUNCTION TEMPERATURE (°C)
C
Temperature
Temperature
, CASE TEMPERATURE (°C)
V
CES
75
25
= 300V
50
100
2.0
75
V
ECS
125
= 24V
100
V
CES
3.0
125
V
(Continued)
= 250V
GE
150
T
J
= 4.0V
= 175°C
150
175
175
4.0
Figure 10. Threshold Voltage vs Junction
25
20
15
10
5
0
Figure 12. Switching Time vs Junction
2.2
2.0
1.8
1.6
1.4
1.2
1.0
12
10
8
6
4
2
1.0
Figure 8. Transfer Characteristics
25
-50
DUTY CYCLE < 0.5%, V
I
CE
PULSE DURATION = 250µs
= 6.5A, V
1.5
-25
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
50
V
T
GE
T
J
T
0
J
, GATE TO EMITTER VOLTAGE (V)
J
= 25°C
, JUNCTION TEMPERATURE (°C)
2.0
GE
Temperature
Temperature
JUNCTION TEMPERATURE (°C)
T
= 5V, R
J
75
25
= 150°C
2.5
Resistive t
G
CE
50
= 1K
100
= 5V
3.0
75
OFF
T
125
100
J
3.5
= -40°C
Resistive t
Inductive t
125
I
V
CE
CE
150
4.0
= 1mA
= V
150
GE
ON
OFF
4.5
175
175