FGA15N120ANTDTU_F109 Fairchild Semiconductor, FGA15N120ANTDTU_F109 Datasheet - Page 5

• Manufacturer Part Number: FGA15N120ANTDTU_F109
• Description: IGBT NPT 15A 1200V TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120ANTDTU_F109

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 186W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Typical Performance Characteristics
Figure 7. Turn-On Characteristics vs. Gate
Figure 9. Switching Loss vs. Gate Resistance
Figure 11. Turn-Off Characteristics vs.
100
100
10
10
10
1
1
0
0
10
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
CC
C
C
GE
C
C
= 15A
= 25
= 125
= 25
= 125
= 600V, V
tr
= 15V, R
td(on)
10
10
o
o
C
C
o
o
C
C
Collector Current
15
G
GE
20
20
= 10
Gate Resistance, R
Collector Current, I
Gate Resistance, R
Resistance
= 15V
Ω
30
30
20
40
40
Common Emitter
V
I
T
T
C
C
CC
C
C
G
G
= 15A
= 25
= 125
[
[A]
Ω
[
= 600V, V
Ω
50
50
]
]
25
o
C
o
C
GE
60
td(off)
tf
60
Eon
Eoff
= 15V
30
70
70
(Continued)
5
Figure 12. Switching Loss vs. Collector Current
Figure 8. Turn-Off Characteristics vs. Gate
Collector Current
Figure 10. Turn-On Characteristics vs.
1000
0.1
100
100
10
10
10
1
5
10
0
Common Emitter
V
T
T
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
GE
C
C
GE
C
C
C
C
CC
= 25
= 125
= 15A
= 25
= 125
= 25
= 125
= 15V, R
= 15V, R
= 600V, V
10
o
o
o
C
C
o
C
o
C
o
10
C
C
G
15
G
= 10
GE
= 10
20
Gate Resistance, R
Collector Current, I
Collector Current, I
= 15V
Resistance
Ω
Ω
15
30
20
40
20
C
G
C
[A]
[
[A]
Ω
50
]
25
25
td(off)
60
td(on)
Eon
tr
tf
Eoff
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70
30
30