HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet - Page 4

• Manufacturer Part Number: HGTG12N60C3D
• Description: IGBT UFS N-CHAN 600V 24A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
200
100
100
10
50
30
20
10
25
20
15
10
5
5
0
25
5
5
T
T
J
J
= 150
= 150
TEMPERATURE
EMITTER CURRENT
EMITTER CURRENT
I
CE
I
CE
o
o
C, R
50
10
, COLLECTOR TO EMITTER CURRENT (A)
C, R
10
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
T
G
G
C
= 25Ω, L = 100µH, V
, CASE TEMPERATURE (
= 15V
= 25Ω, L = 100µH, V
75
15
15
100
20
20
CE(PK)
CE(PK)
(Continued)
o
= 480V
C)
= 480V
V
V
GE
GE
125
25
25
= 10V
= 15V
V
V
GE
GE
= 10V
= 15V
150
30
30
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
20
15
10
400
300
200
100
300
200
100
5
90
80
10
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
5
V
5
T
CE
T
J
J
= 150
= 360V, R
= 150
EMITTER CURRENT
EMITTER CURRENT
V
I
I
CE
CE
GE
11
o
o
C, R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, GATE TO EMITTER VOLTAGE (V)
C, R
10
10
G
G
G
= 25Ω, T
= 25Ω, L = 100mH, V
= 25Ω, L = 100µH, V
12
15
J
15
= 125
13
V
o
GE
C
I
SC
V
= 10V or 15V
20
20
t
GE
SC
CE(PK)
CE(PK)
= 10V
14
HGTG12N60C3D Rev. B
= 480V
= 480V
V
GE
25
25
= 15V
15
140
120
100
80
60
40
20
30
30