HGTG11N120CN Fairchild Semiconductor, HGTG11N120CN Datasheet

IGBT NPT N-CH 1200V 43A TO-247

HGTG11N120CN

Manufacturer Part Number
HGTG11N120CN
Description
IGBT NPT N-CH 1200V 43A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG11N120CN

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 11A
Current - Collector (ic) (max)
43A
Power - Max
298W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
Symbol
HGTG11N120CN
HGTP11N120CN
HGT1S11N120CNS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
TO-220AB
TO-263AB
PACKAGE
E
C
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G11N120CN
11N120CN
11N120CN
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
HGTG11N120CN, HGTP11N120CN,
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 43A, 1200V, T
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
• Related Literature
Packaging
Temperature Compensating SABER™ Model
www.fairchildsemi.com
- TB334 “Guidelines for Soldering Surface Mount
COLLECTOR
Components to PC Boards”
(FLANGE)
December 2001
(BOTTOM SIDE
COLLECTOR
METAL)
JEDEC TO-220AB (ALTERNATE VERSION)
G
E
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
C
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B
= 25
JEDEC STYLE TO-247
JEDEC TO-263AB
HGT1S11N120CNS
o
C
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
(FLANGE)
G
C
E
E
4,587,713
4,644,637
4,801,986
4,883,767
C
J
= 150
G
o
C

Related parts for HGTG11N120CN

HGTG11N120CN Summary of contents

Page 1

... HGT1S11N120CNS JEDEC STYLE TO-247 E METAL) JEDEC TO-220AB (ALTERNATE VERSION JEDEC TO-263AB COLLECTOR (FLANGE 4,516,143 4,532,534 4,587,713 4,639,762 4,641,162 4,644,637 4,783,690 4,794,432 4,801,986 4,837,606 4,860,080 4,883,767 4,963,951 4,969,027 HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev 150 ...

Page 2

... CM 20 GES 30 GEM 55A at 1200V 298 D 2. -55 to 150 J STG 300 L 260 pkg MIN TYP 1200 - 125 C - 250 150 2 150 C - 2.8 C 6.0 6 15V 1200V - 10 15V - 100 20V - 130 GE HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B UNITS MAX UNITS - 250 2 250 120 nC 150 nC ...

Page 3

... IGBT only. E ON1 as the IGBT. The diode type is specified 150 15V 400 200 400 600 800 1000 V , COLLECTOR TO EMITTER VOLTAGE (V) CE HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B MAX UNITS 240 ns 230 ns 0.5 mJ 1 280 ns 400 ns 0 ...

Page 4

... GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME - 150 DUTY CYCLE < 0.5%, V 250 s PULSE TEST COLLECTOR TO EMITTER VOLTAGE ( 2mH 960V 150 12V OR 15V 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B 250 200 I SC 150 100 15V ...

Page 5

... FIGURE 12. FALL vs COLLECTOR TO EMITTER CURRENT 2mH 960V 150 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 2mH 960V 150 12V OR 15V 12V OR 15V COLLECTOR TO EMITTER CURRENT ( 1mA 54 G(REF 800V 1200V 400V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev 12V o = 150 15V 120 100 ...

Page 6

... FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION (s) 1 HGTG11N120CND 960V DUTY CYCLE < 0.5 110 C C 250 s PULSE TEST V = 15V COLLECTOR TO EMITTER VOLTAGE ( DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF FIGURE 19. SWITCHING TEST WAVEFORMS HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev 10V d(ON)I ...

Page 7

... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev d(OFF)I ). The ON2 - T )/ ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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