HGTG12N60A4 Fairchild Semiconductor, HGTG12N60A4 Datasheet - Page 2
![IGBT N-CH SMPS 600V 54A TO247](/photos/5/31/53163/261-to-247_sml.jpg)
HGTG12N60A4
Manufacturer Part Number
HGTG12N60A4
Description
IGBT N-CH SMPS 600V 54A TO247
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGTG12N60A4.pdf
(8 pages)
Specifications of HGTG12N60A4
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
54A
Power - Max
167W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
54 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
167 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
54 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
54A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
167W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
HGTG12N60A4_NL
HGTG12N60A4_NL
HGTG12N60A4_NL
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Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2003 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
1. Pulse width limited by maximum junction temperature.
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
C
= 25
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
C
C
= 25
> 25
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
J
T
= 25
C
= 25
o
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
V
V
t
BV
BV
Q
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
E
E
E
d(ON)I
I
I
GES
g(ON)
CES
GEP
ON1
ON2
OFF
t
t
CES
ECS
rI
fI
I
I
V
I
V
I
V
T
L = 100 H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 500 H
Test Circuit (Figure 20)
C
C
C
C
C
C
CE
GE
GE
J
GE
CE
CE
CE
G
= 250 A, V
= -10mA, V
= 12A,
= 250 A, V
= 12A, V
= 12A,
= 150
= 10
= 12A
= 600V
= 15V
= 20V
= 300V
= 390V
=15V
o
TEST CONDITIONS
C, R
CE
CE
GE
CE
GE
G
= 300V
= 600V
= 10
= 0V
= 600V
= 0V
J
T
T
T
T
V
V
J
= 25
, T
J
J
J
J
GE
GE
V
= 25
= 125
= 25
= 125
GEM
GES
PKG
CES
STG
GE
C25
CM
= 15V
= 20V
o
C
D
L
o
o
= 15V
C
C
o
o
HGTG12N60A4, HGTP12N60A4,
C
C
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGT1S12N60A4S9A
60A at 600V
-55 to 150
MIN
600
20
60
1.33
600
167
300
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
23
96
20
30
TYP
160
2.0
1.6
5.6
78
97
17
96
18
55
50
8
8
-
-
-
-
-
-
MAX
250
120
2.0
2.7
2.0
250
96
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
A
A
A
V
V
C
C
C
UNITS
o
C
mA
nC
nC
nA
ns
ns
ns
ns
V
V
V
V
V
A
V
A
J
J
J