HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet
HGTG10N120BND
Specifications of HGTG10N120BND
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HGTG10N120BND Summary of contents
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... Data Sheet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND on- P unch T hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor ...
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... SC MIN TYP 1200 - 125 C - 170 150 2. 150 C - 3.7 C 6.0 6 15V 1200V - 10 15V - 100 20V - 130 165 - 100 - 0.85 - 0.8 UNITS µ s µ s MAX UNITS - V µ A 250 µ 2.5 mA 2 ± 250 120 nC 150 210 ns 140 ns 1.05 mJ 1.0 mJ HGTG10N120BND Rev. B ...
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... FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA MIN TYP o = 150 190 - 140 - 1.75 - 1 150 10Ω 15V 400µ 200 400 600 800 1000 V , COLLECTOR TO EMITTER VOLTAGE (V) CE MAX UNITS 250 ns 200 ns 2.3 mJ 1 0.42 C/W o 1.25 C/W 1200 1400 HGTG10N120BND Rev. B ...
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... FIGURE 4. SHORT CIRCUIT WITHSTAND TIME - DUTY CYCLE <0.5%, V PULSE DURATION = 250µ COLLECTOR TO EMITTER VOLTAGE ( 10Ω 2mH 960V 150 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 250 200 I SC 150 100 150 C = 15V 12V OR 15V 15 20 HGTG10N120BND Rev. B ...
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... EMITTER CURRENT 300 R = 10Ω 2mH 250 200 150 12V OR 15V J GE 150 100 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA 60Ω (REF 800V 1200V 400V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS = 12V 15V 960V 120 100 HGTG10N120BND Rev. B ...
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... Unless Otherwise Specified (Continued FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT 15 o DUTY CYCLE <0.5 110 C C PULSE DURATION = 250µ 15V COLLECTOR TO EMITTER VOLTAGE ( θJC θ 200A/µ FORWARD CURRENT ( 10V HGTG10N120BND Rev. B ...
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... A 50% duty factor was used (Figure 3) and the D ) are approximated )/ and E are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and i.e., the collector current equals zero ( d(ON d(ON d(OFF The )/R . θ the OFF during 0). CE HGTG10N120BND Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...