HGTG18N120BND Fairchild Semiconductor, HGTG18N120BND Datasheet - Page 5

• Manufacturer Part Number: HGTG18N120BND
• Description: IGBT NPT N-CHAN 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 54A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
200
150
100
40
35
30
25
20
15
350
300
250
200
150
100
50
0
5
6
5
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
G
FIGURE 13. TRANSFER CHARACTERISTIC
= 3Ω, L = 1mH, V
I
CE
7
V
10
EMITTER CURRENT
EMITTER CURRENT
10
GE
T
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
J
= 25
= 12V, V
V
, COLLECTOR TO EMITTER CURRENT (A)
T
GE
8
C
o
15
= 150
, GATE TO EMITTER VOLTAGE (V)
C, T
15
GE
9
CE
J
o
= 150
C
V
= 15V, T
T
= 960V
GE
C
CE
20
T
20
J
= 25
10
= 12V, V
o
= 25
= 20V
C, V
R
o
J
G
C
o
= 25
GE
11
C, T
= 3Ω, L = 1mH, V
25
25
GE
= 12V
T
o
J
C
C
= 150
= 15V, T
= -55
12
Unless Otherwise Specified (Continued)
30
30
o
o
C, V
C
13
J
= 150
GE
CE
35
35
= 15V
= 960V
14
HGTG18N120BND
o
C
40
40
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
20
15
10
225
175
125
120
100
250
200
150
100
5
0
75
80
60
40
20
50
25
0
0
5
5
I
G(REF)
R
R
FIGURE 14. GATE CHARGE WAVEFORMS
G
T
G
J
= 3Ω, L = 1mH, V
= 3Ω, L = 1mH, V
= 25
EMITTER CURRENT
CURRENT
= 2mA, R
10
I
10
I
CE
CE
V
o
, COLLECTOR TO EMITTER CURRENT (A)
CE
, COLLECTOR TO EMITTER CURRENT (A)
C, V
50
T
= 1200V
J
V
15
GE
15
L
CE
= 25
Q
= 33.3Ω, T
G
T
= 12V OR 15V
= 400V
J
, GATE CHARGE (nC)
o
= 150
C, T
CE
CE
T
20
J
20
= 960V
V
= 960V
J
= 25
o
CE
= 150
100
C
C, V
= 25
= 800V
o
C OR T
GE
o
25
25
C, V
o
C
= 12V OR 15V
GE
J
= 150
= 12V
30
30
HGTG18N120BND Rev.C
150
o
C, V
35
35
GE
= 15V
40
200
40