HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 2

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
©2004 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
1. Pulse width limited by Max junction temperature.
2. I
3. V
At T
At T
CE
CE(PK)
C
C
= 25
= 110
= 30A, L = 400 H, T
o
= 960V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
J
C
= 25
= 125
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
o
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
C
T
= 3
= 25
C
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
HGTG27N120BN / HGT5A27N120BN
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
E
E
E
d(ON)I
I
I
G(ON)
GES
CES
GEP
ON1
ON2
OFF
t
t
CES
ECS
rI
fI
I
I
V
I
V
I
V
T
L = 200 H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH,
Test Circuit (Figure 18)
C
C
C
C
C
C
CE
GE
GE
J
GE
CE
CE
CE
G
= 250 A, V
= 10mA, V
= 27A,
= 250 A, V
= I
= 27A,
= 150
= 3
= 27A,
= 1200V
= 15V
= 20V
= 600V
= 960V,
= 15V,
C110
o
TEST CONDITIONS
C, R
, V
CE(PK)
CE
GE
GE
CE
G
= 3
= 0.5 BV
= 0V
= V
= 0V
GE
= 1200V
J
T
T
T
T
T
V
V
J
= 25
, T
C
C
C
C
C
GE
GE
V
GE
C110
GEM
= 25
= 125
= 150
= 25
= 150
CES
GES
CES
STG
C25
CM
= 15V
= 20V
SC
SC
o
AV
C,
D
= 15V,
L
o
o
C
C
o
o
o
C
C
C
HGTG27N120BN
150A at 1200V
-55 to 150
1200
MIN
150
15
1200
6
216
500
135
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.0
72
34
15
20
30
8
HGTG27N120BN / HGT5A27N12BN Rev. C2
TYP
2.45
300
270
350
195
3.8
6.6
9.2
2.2
2.7
2.3
24
20
80
-
-
-
-
-
-
MAX
250
325
420
240
120
2.7
4.2
250
3.3
2.8
30
25
4
-
-
-
-
-
-
-
UNITS
W/
mJ
o
o
W
V
A
A
A
V
V
C
C
UNITS
o
s
s
C
mA
nC
nC
mJ
mJ
mJ
nA
ns
ns
ns
ns
V
V
V
V
V
A
V
A
A