FGL40N120ANDTU Fairchild Semiconductor, FGL40N120ANDTU Datasheet

IGBT NPT 1200V 64A TO264

FGL40N120ANDTU

Manufacturer Part Number
FGL40N120ANDTU
Description
IGBT NPT 1200V 64A TO264
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGL40N120ANDTU

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 40A
Current - Collector (ic) (max)
64A
Power - Max
500W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 25 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
64 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
64A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
500W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FGL40N120ANDTU_NL
FGL40N120ANDTU_NL

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©2008 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A2
FGL40N120AND
1200V NPT IGBT
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Absolute Maximum Ratings
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
P
SCWT
T
T
T
R
R
R
C
CM(1)
F
FM
J
STG
L
CES
GES
D
Symbol
θJC
θJC
θJA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
V
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
CE
= 600V, V
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C
CE(sat)
rr
GE
= 75ns (typ.)
= 15V, T
= 2.6 V @ I
E
Parameter
C
= 125°C
Parameter
C
= 40A
TO-264
@T
@T
@T
@T
@T
C
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
1
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
FGL40N120AND
-55 to +150
-55 to +150
Typ.
1200
--
--
--
±25
160
240
500
200
300
64
40
40
10
G
Max.
0.25
0.7
E
25
C
February 2008
Units
www.fairchildsemi.com
µs
°C
°C
°C
W
W
V
V
A
A
A
A
A
Units
°C/W
°C/W
°C/W
tm

Related parts for FGL40N120ANDTU

FGL40N120ANDTU Summary of contents

Page 1

... R (DIODE) Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FGL40N120AND Rev. A2 Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series = 40A C offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS) ...

Page 2

Package Marking and Ordering Information Device Marking Device FGL40N120AND FGL40N120AND Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector-Emitter Breakdown Voltage CES BV / Temperature Coefficient of Breakdown CES ∆T Voltage J I Collector Cut-Off Current CES I ...

Page 3

Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr FGL40N120AND Rev 25°C unless otherwise noted C ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 ° 250 200 150 100 Collector-Emitter Voltage, V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 Common ...

Page 5

Typical Performance Characteristics Figure 7. Capacitance Characteristics 6000 5000 Ciss 4000 3000 2000 Coss 1000 Crss 0 1 Collector-Emitter Voltage, V Figure 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter ± 600V 15V 40A ...

Page 6

Typical Performance Characteristics Figure 13. Switching Loss vs. Collector Current Common Emitter ± Ω 15V ° ° 125 0 ...

Page 7

Typical Performance Characteristics Figure 19. Stored Charge 100 90 µ di/dt = 200A di/dt = 100A Forward Current , I Figure 21. Transient Thermal Impedance of IGBT 1 0.5 0.1 ...

Page 8

Mechanical Dimensions (8.30) (7.00) ±0.20 4.90 (1.50) ±0.20 2.50 5.45TYP ±0.30 [5.45 ] FGL40N120AND Rev. A2 TO-264 ±0.20 20.00 (8.30) (1.00) (0.50) (7.00) (1.50) ±0.20 3.00 +0.25 1.00 –0.10 5.45TYP ±0.30 [5. (2.00) (1.50) +0.25 0.60 ±0.30 2.80 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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