APT13GP120KG Microsemi Power Products Group, APT13GP120KG Datasheet
APT13GP120KG
Manufacturer Part Number
APT13GP120KG
Description
IGBT 1200V 41A 250W TO220
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT13GP120KG.pdf
(6 pages)
Specifications of APT13GP120KG
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 13A
Current - Collector (ic) (max)
41A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A new generation of high voltage power IGBTs.
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
POWER MOS 7
IGBT provides a lower cost alternative to a Power MOSFET.
1
(V
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
• 100 kHz operation @ 600V, 10A
C
C
C
GE
GE
= 150°C
= 25°C
= 110°C
= 15V, I
= 15V, I
, I
= ±20V)
J
C
= 150°C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
®
= 13A, T
= 13A, T
= 0V, T
= 0V, T
IGBT
Using punch-through
j
C
= 25°C)
= 250µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
3
APT13GP120K
50A @ 960V
G
-55 to 150
C
TYP
E
1200
4.5
3.3
3.0
±20
±30
250
300
41
20
50
TO-220
2500
±100
MAX
250
3.9
G
6
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E
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APT13GP120KG Summary of contents
Page 1
POWER MOS 7 A new generation of high voltage power IGBTs. technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current ...
Page 2
Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Reverse Bias Safe ...
Page 3
15V. 250µs PULSE TEST 35 <0.5 % DUTY CYCLE -55° 125° 25° ...
Page 4
V = 15V 600V 25°C T =125° 5Ω 100 µ COLLECTOR ...
Page 5
V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. Figure ...
Page 6
APT15DF120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) DrainVoltage 90 10% 0 Drain Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 3.42 (.135) 2.54 ...