APT13GP120KG Microsemi Power Products Group, APT13GP120KG Datasheet - Page 3

• Manufacturer Part Number: APT13GP120KG
• Description: IGBT 1200V 41A 250W TO220
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120KG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
6
5
4
3
2
1
0
FIGURE 1, Output Characteristics(V
V
-50
0
0
6
CE
250µs PULSE TEST
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
T
1
-25
V GE = 15V.
T J = 25°C.
J
, GATE-TO-EMITTER VOLTAGE (V)
1
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
T
8
C
C
2
= 125°C
= -55°C
0
2
3
10
I
25
I
I
C
C
T J = 125°C
C
4
= 6.5A
= 13A
= 26A
3
T J = 25°C
5
50
12
T J = -55°C
T
C
4
6
= 25°C
75
7
14
5
GE
100
8
= 15V)
125
16
6
9
FIGURE 6, On State Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
40
35
30
25
20
15
10
16
14
12
10
60
50
40
30
20
10
5
0
8
6
4
2
0
5
4
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
V
-55
0
0
CE
250µs PULSE TEST
T
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
I
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 13A
T
-25
V GE = 10V.
I
-25
V GE = 15V.
C
J
, JUNCTION TRMPERATURE (°C)
10
T
1
= 26A
T
C
C
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
T
= 125°C
0
I
C
C
GATE CHARGE (nC)
0
= 6.5A
20
= -55°C
2
25
V
CE
25
V
CE
= 600V
30
50
3
= 240V
I
50
C
= 13A
75
T
C
40
4
= 25°C
75
100 125 150
V
CE
50
100
= 960V
5
GE
= 10V)
125
60
6