APT13GP120KG Microsemi Power Products Group, APT13GP120KG Datasheet - Page 5

• Manufacturer Part Number: APT13GP120KG
• Description: IGBT 1200V 41A 250W TO220
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120KG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Junction
temp. ( ”C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.60
0.50
0.40
0.30
0.20
0.10
(Watts)
500
100
V
Power
10
CE
1
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
0.9
0.05
0.7
0.5
0.3
0.1
20
0.216
0.284
10
30
-4
40
SINGLE PULSE
0.600F
0.161F
RECTANGULAR PULSE DURATION (SECONDS)
C oes
C res
C ies
50
10
-3
181
100
50
10
5
Figure 20, Operating Frequency vs Collector
10
T
T
D = 50 %
V
R
J
C
CE
G
= 125
Figure 18, Minimim Switching Safe Operating Area
-2
= 75
60
50
40
30
20
10
= 5 Ω
= 600V
0
0
°
I
°
10
C
V
C
C
, COLLECTOR CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE
200
15
Current
Note:
400
Peak T J = P DM x Z θJC + T C
10
20
Duty Factor D = t 1 / t
-1
600
t 1
25
t 2
800
30
2
F
f
f
P
max1
max 2
max
diss
APT13GP120K
1000
1.0
=
=
=
=
min(f
T
t
E
P
R
J
d (on )
diss
on 2
−
θ
JC
T
−
max1
+
+
C
P
E
t
cond
0.05
r
, f
off
+
max 2
t
d(off )
)
+
t
f