APT13GP120BG Microsemi Power Products Group, APT13GP120BG Datasheet - Page 3

• Manufacturer Part Number: APT13GP120BG
• Description: IGBT 1200V 41A 250W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
6
5
4
3
2
1
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
TEST<0.5 % DUTY
V
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
J
250µs PULSE
T
1
T
-25
= 25°C
J
J
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
T
= 125°C
8
J
2
= -55°C
0
3
2
T
10
J
25
= 125°C
T
4
J
T
= 25°C
3
J
= -55°C
5
50
12
<0.5 % DUTY CYCLE
250µs PULSE TEST
4
6
75
T
J
= 25°C.
7
14
5
J
100 125
= 25°C)
8
16
6
9
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
FIGURE 2, Output Characteristics (T
-55
-50
V
0
0
CE
<0.5 % DUTY CYCLE
250µs PULSE TEST
, COLLECTER-TO-EMITTER VOLTAGE (V)
T
-25
J
-25
T
= 25°C
V
10
T
J
1
GE
T
= 125°C
C
T
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
J
FIGURE 4, Gate Charge
= -55°C
0
0
GATE CHARGE (nC)
20
2
25
V
CE
25
= 240V
30
50
3
50
75 100 125 150
40
4
75
50
100
J
5
= 125°C)
125
60
6