APT13GP120BG Microsemi Power Products Group, APT13GP120BG Datasheet - Page 5

• Manufacturer Part Number: APT13GP120BG
• Description: IGBT 1200V 41A 250W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.60
0.50
0.40
0.30
0.20
0.10
500
100
V
Junction
temp. (°C)
50
10
CE
0
1
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.216
0.284
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
oes
res
ies
0.006F
0.161F
50
SINGLE PULSE
10
-3
181
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
= XXXV
Figure 18,Minimim Switching Safe Operating Area
-2
60
50
40
30
20
10
0
°
I
°
10
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE
200
15
Note:
400
Peak T J = P DM x Z θJC + T C
20
10
Duty Factor D =
-1
t 1
600
25
t 2
APT13GP120B_S(G)
800
t 1
/
30
t 2
F
f
f
P
max1
max2
max
diss
1000
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f