APT13GP120BG Microsemi Power Products Group, APT13GP120BG Datasheet - Page 4

• Manufacturer Part Number: APT13GP120BG
• Description: IGBT 1200V 41A 250W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
V
T
R
L = 100 µH
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
CE
J
, COLLECTOR TO EMITTER CURRENT (A)
G
G
= 25°C
= 5Ω
= 5Ω
= 600V
= +15V
= 600V
=
R
5Ω, L
G
, GATE RESISTANCE (OHMS)
or
T
=
J
125°C
=
100
25 or 125°C,V
µ
H, V
V
CE
GE
=
= 15V
600V
GE
=
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
GE
=
T
=
J
5Ω
, JUNCTION TEMPERATURE (°C)
=15V,T
600V
J
=125°C
V
GE
=15V,T
J
=25°C