APT25GT120BRDQ2G Microsemi Power Products Group, APT25GT120BRDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT25GT120BRDQ2G
• Description: IGBT 1200V 54A 347W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT25GT120BRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 54A
• Power - Max: 347W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GT120BRDQ2GMI; APT25GT120BRDQ2GMI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
GE
TEST<0.5 % DUTY
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
GE
= 15V
T
J
2
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
T
, JUNCTION TEMPERATURE (°C)
, GATE-TO-EMITTER VOLTAGE (V)
J
T
8
= -55°C
T
J
T
2
J
0
= 125°C
J
= 125°C
4
= 25°C
I
T
C
J
25
= 50A
10
= 25°C
6
I
T
C
50
4
J
= 25A
= -55°C
8
12
75
<0.5 % DUTY CYCLE
250µs PULSE TEST
10
I
C
100 125 150
T
6
J
= 12.5A
= 25°C.
14
J
12
= 25°C)
16
14
8
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
100
80
60
40
20
16
14
12
10
80
70
60
50
40
30
20
10
0
FIGURE 2, Output Characteristics (T
8
6
4
2
0
6
5
4
3
2
1
0
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
20 40 60 80 100 120 140 160 180 200
= 25°C
= 25A
-25
V
25
GE
T
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
I
5
C
0
GATE CHARGE (nC)
= 50A
50
V
V
25
15V
CE
CE
I
C
= 600V
= 240V
= 25A
10
75
50
I
75 100 125 150
C
13V
100
= 12.5A
12V
15
V
11V
CE
125
J
10V
= 960V
= 125°C)
9V
8V
7V
150
20