APT25GT120BRDQ2G Microsemi Power Products Group, APT25GT120BRDQ2G Datasheet - Page 4

• Manufacturer Part Number: APT25GT120BRDQ2G
• Description: IGBT 1200V 54A 347W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT25GT120BRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 54A
• Power - Max: 347W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GT120BRDQ2GMI; APT25GT120BRDQ2GMI

10,000
18,000
16,000
14,000
12,000
10,000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
8,000
6,000
4,000
2,000
8,000
6,000
4,000
2,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0
0
0
I
I
10 15
CE
10 15
CE
10 15
I
0
CE
V
V
T
E
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
GE
CE
GE
G
off,
J
CE
G
E
, COLLECTOR TO EMITTER CURRENT (A)
G
= 125°C
= 25°C
= 5Ω
on2,
= 5Ω
= 800V
25A
= 800V
= +15V
= +15V
= 800V
=
R
5Ω, L
25A
G
10
, GATE RESISTANCE (OHMS)
20
20
20
,
V
or 125°C
GE
=
100
25
25
25
= 15V
T
J
20
µ
H, V
=
E
30
30
30
T
125°C
on2,
J
CE
=
T
12.5A
25 or 125°C,V
35
=
35
35
J
=
800V
30
25°C
40
40
40
E
on2,
E
45
45
45
off,
40
GE
50A
12.5A
E
=
off,
50
50
50 55
15V
50A
55
55
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
2500
2000
1500
1000
200
180
160
140
120
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
500
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
50
45
40
35
30
25
20
15
10
0
5
0
0
0
I
I
10 15
CE
10 15
CE
10 15 20
I
0
CE
V
V
R
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
T
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
E
CE
, COLLECTOR TO EMITTER CURRENT (A)
G
J
on2,
V
= 5Ω
= 5Ω
=
=
= 800V
= 800V
T
= +15V
= +15V
GE
=
J
5Ω
25°C, V
800V
25A
, JUNCTION TEMPERATURE (°C)
=15V,T
25
20
20
GE
T
J
25
25
25
=125°C
J
=
R
=
50
G
15V
E
125°C
on2,
30
=
30 35
30 35
5Ω, L
12.5A
V
T
35
GE
J
=
=
75
E
=15V,T
E
100
125°C, V
off,
on2,
40
40
40
T
12.5A
J
µ
H, V
50A
=
J
=25°C
25°C
45
45
45 50
100
GE
CE
E
E
=
=
off,
50
50
off,
800V
15V
25A
50A
125
55
55
55