APT25GT120BRDQ2G Microsemi Power Products Group, APT25GT120BRDQ2G Datasheet - Page 5

• Manufacturer Part Number: APT25GT120BRDQ2G
• Description: IGBT 1200V 54A 347W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT25GT120BRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 54A
• Power - Max: 347W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GT120BRDQ2GMI; APT25GT120BRDQ2GMI

TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
50
10
V
0
CE
10
0
(watts)
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.5
0.05
0.7
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.178
0.182
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
0.0101
0.136
50
SINGLE PULSE
10
-3
140
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
5
10
10
Figure 18,Minimim Switching Safe Operating Area
-2
80
70
60
50
40
30
20
10
0
I
C
0
15
, COLLECTOR CURRENT (A)
V
CE
200
, COLLECTOR TO EMITTER VOLTAGE
20
25
400
Note:
30
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
35
-1
800 1000 1200 1400
t 1
40
APT25GT120BRDQ2(G)
t 2
45
t 1
50
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f