SGB02N60 Infineon Technologies, SGB02N60 Datasheet
SGB02N60
Specifications of SGB02N60
Related parts for SGB02N60
SGB02N60 Summary of contents
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... Soldering temperature (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 1) Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking CE(sat)150°C j 2.2V G02N60 150 C Symbol jmax - SGB02N60 G PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Value 600 6.0 2 -55...+150 245 Rev ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SGB02N60 Max. Value 4.2 40 Value min. Typ. max. 600 - = 1.7 1.9 2.4 - 2.2 2 250 = 100 = 1.6 - 142 170 - Rev. 2.3 Unit K/W Unit - Nov 06 ...
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... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB02N60 Value Unit min. typ. max 259 311 - 0.036 0.041 mJ - 0.028 0.036 - 0.064 0.078 Value Unit min. typ. max 287 344 - ...
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... 10A 1A 0.1A 0.01A 1V 100kHz V CE Figure 2. Safe operating area ( 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SGB02N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE C 150 C) j Rev. 2.3 ...
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... COLLECTOR CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB02N60 =20V 15V 13V 11V EMITTER VOLTAGE 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE Rev ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.15mA SGB02N60 t d(off) t d(on 100 200 300 R , GATE RESISTOR G = 150 400V 2A, C max. 0°C 50° ...
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... Dynamic test circuit in Figure E) D=0.5 0 K/W ts 0 K/W 0.01 E off -2 10 K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB02N60 and E include losses off 100 200 300 R , GATE RESISTOR G = 150 400V 2A 1.026 0.035 1.3 3.62*10 1.69 4 ...
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... GE 40A 30A 20A 10A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB02N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...
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... PG-TO263-3-2 9 SGB02N60 Rev. 2.3 Nov 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SGB02N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =180pF. Rev. 2.3 Nov 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGB02N60 11 Rev. 2.3 Nov 06 ...