IGD06N60T Infineon Technologies, IGD06N60T Datasheet
IGD06N60T
Specifications of IGD06N60T
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IGD06N60T Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors TrenchStop® Series ® and Fieldstop technology 1 for target applications http://www.infineon.com/igbt Marking CE(sat),Tj=25°C j,max 1.5V G06T60 175 C Symbol V I jmax I jmax - IGD06N60T PG-TO-252-3-11 (D-PAK) (TO-252AA) Package PG-TO-252-3-11 Value 600 -40...+175 j -55...+175 260 December ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors TrenchStop® Series Symbol Conditions unless otherwise specified Symbol Conditions 25m 18m IGD06N60T Max. Value 1.7 62 Value min. typ. max. 600 - = 1.5 2.05 - 1.8 4.1 4.6 5 700 = 100 = 3.6 none - 368 - December 06 q Unit K/W Unit - V µ Ω ...
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... Conditions Energy losses include E “tail” and diode reverse recovery =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery . IGD06N60T q Value Unit min. typ. max 130 - - 0. 0. 0.2 - Value Unit min. typ. max 165 - - 0. 0. 0.335 - December 06 ...
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... C) j Power Semiconductors TrenchStop® Series 10A 1A 0,1A 100kHz 1V Figure 2. Safe operating area = 400V 15A 10A 5A 0A 25°C Figure 4. Collector current as a function of 4 IGD06N60T 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C;V =15V 75°C 125° CASE TEMPERATURE ...
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... Figure 6. Typical output characteristic (T 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V 5 IGD06N60T COLLECTOR EMITTER VOLTAGE = 175° 0°C 50°C 100°C , JUNCTION TEMPERATURE J = 15V) GE December 06 q =12A C =6A C ...
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... Figure 10. Typical switching times as a =175°C, = 23Ω 150°C -50°C Figure 12. Gate-emitter threshold voltage as = 400V, = 23Ω IGD06N60T t d(off GATE RESISTOR G function of gate resistor (inductive load, T =175° 400V 0/15V 6A Dynamic test circuit in Figure E) 0°C 50°C 100° ...
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... Figure 14. Typical switching energy losses =175°C, =23Ω, G 0,5m J 0,4m J 0,3m J 0,2m J 0,1m J 0,0m J 150°C 200V Figure 16. Typical switching energy losses =400V, = 23Ω IGD06N60T *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =175° 400V, V ...
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... Figure 18. Typical capacitance as a function 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V Figure 20. Short circuit withstand time as a 150 C) 8 IGD06N60T 0V 10V 20V COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE 11V 12V 13V V ...
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... K/W 0 0.3837 0.1 0.4533 0.5877 0.05 0.2483 - 0.02 0.01 C single pulse -2 10 K/W 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure 21. IGBT transient thermal resistance ( Power Semiconductors TrenchStop® Series , ( 5.047*10 -3 4.758*10 -4 4.965*10 -5 4.717* 10m s 100m s 9 IGD06N60T q December 06 ...
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... PG-TO252-3-11 Power Semiconductors TrenchStop® Series 10 IGD06N60T q December 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors TrenchStop® Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 11 IGD06N60T =60nH =40pF. December 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors TrenchStop® Series 12 IGD06N60T q December 06 ...