IKB06N60T Infineon Technologies, IKB06N60T Datasheet
IKB06N60T
Specifications of IKB06N60T
Available stocks
Related parts for IKB06N60T
IKB06N60T Summary of contents
Page 1
... Fieldstop technology 1 for target applications http://www.infineon.com/igbt Marking CE(sat),Tj=25°C j,max 1.5V K06T60 175 C Symbol V I jmax I jmax - I jmax I jmax <1000; time between short circuits: >1s. 1 IKB06N60T G PG-TO-263-3-2 Package PG-TO-263-3-2 Value 600 -40...+175 j -55...+175 245 Rev. 2.3 Oct. 07 ...
Page 2
... Conditions Footprint 6cm² unless otherwise specified Symbol Conditions 25m 18m IKB06N60T Max. Value 1.7 2 Value min. typ. max. 600 - = 1.5 2.05 - 1.8 - 1.6 2.05 - 1.6 4.1 4.6 5 700 = 100 = 3.6 none - 368 - Rev. 2.3 Oct Unit K/W Unit - V - µ Ω ...
Page 3
... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKB06N60T p Value Unit min. typ. max 130 - - 123 - ns - 190 - 450 - A/ s Value Unit min. typ. max 165 - - 0. 0. 0.335 - - 180 - ns - 500 - ...
Page 4
... C) j Power Semiconductors ® TrenchStop series 10A 1A 0,1A 100kHz 1V Figure 2. Safe operating area = 400V 15A 10A 5A 0A 25°C Figure 4. Collector current as a function of 4 IKB06N60T 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C;V =15V 75°C 125° CASE TEMPERATURE C ...
Page 5
... Figure 6. Typical output characteristic (T 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V 5 IKB06N60T COLLECTOR EMITTER VOLTAGE = 175° 0°C 50°C 100°C , JUNCTION TEMPERATURE J = 15V) GE Rev. 2.3 Oct =12A C =6A ...
Page 6
... Figure 10. Typical switching times as a =175°C, = 23Ω 150°C -50°C Figure 12. Gate-emitter threshold voltage as = 400V, = 23Ω IKB06N60T t d(off GATE RESISTOR G function of gate resistor (inductive load, T =175° 400V 0/15V 6A Dynamic test circuit in Figure E) 0°C 50°C 100° ...
Page 7
... Figure 14. Typical switching energy losses =175°C, =23Ω, G 0,5m J 0,4m J 0,3m J 0,2m J 0,1m J 0,0m J 150°C 200V Figure 16. Typical switching energy losses =400V, = 23Ω IKB06N60T *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =175° 400V, V ...
Page 8
... Figure 18. Typical capacitance as a function 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V Figure 20. Short circuit withstand time as a 150 C) 8 IKB06N60T 0V 10V 20V COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE 11V 12V 13V V ...
Page 9
... Figure 22. Diode transient thermal 0,5µC 0,4µC T =175°C J 0,3µC 0,2µC T =25°C J 0,1µC 0,0µC 800A/µs Figure 24. Typical reverse recovery charge 9 IKB06N60T D=0.5 0 0.2520 4.849*10 0.4578 1.014*10 0.1 1.054 1.309*10 0.7822 1.343*10 0. 0.02 ...
Page 10
... Figure 26. Typical diode peak rate of fall of 2, 1,5V 1,0V =175°C 0,5V 25°C 0,0V 2V Figure 28. Typical diode forward voltage IKB06N60T T =25° 200A/µs 400A/µs 600A/µs 800A/µs di /dt, DIODE CURRENT SLOPE F reverse recovery current as a function of diode current slope ...
Page 11
... Power Semiconductors ® TrenchStop series PG-TO-263-3-2 11 IKB06N60T p Rev. 2.3 Oct. 07 ...
Page 12
... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop series i Figure C. Definition of diodes switching characteristics T (t) j p(t) Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 12 IKB06N60T / =60nH =40pF. Rev. 2.3 Oct ...
Page 13
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop series 13 IKB06N60T p Rev. 2.3 Oct. 07 ...