SKB02N60 Infineon Technologies, SKB02N60 Datasheet - Page 12

• Manufacturer Part Number: SKB02N60
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SKB02N60XT

Figure B. Definition of switching losses
Figure A. Definition of switching times
12
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
SKB02N60
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r r
r r
Rev. 2.2
t
r r
S
Q
S
+
90% I
F
t
+
F
Q
t
F
=180nH
=180pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
Oct. 07
r r m
V
T
t
R
C