SGB02N120 Infineon Technologies, SGB02N120 Datasheet - Page 7
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SGB02N120
Manufacturer Part Number
SGB02N120
Description
IGBT NPT 1200V 6.2A 62W TO263-3
Manufacturer
Infineon Technologies
Datasheet
1.SGB02N120.pdf
(11 pages)
Specifications of SGB02N120
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGB02N120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Power Semiconductors
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
GE
2A
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 2A, R
include losses
include losses
= 800V,
50°C
4A
G
= 91 ,
100°C
G
6A
= 9 1 ,
150°C
8A
E
E
E
E
E
on
E
ts
on
off
ts
*
off
*
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
CE
-1
-2
0
K/W
K/W
K/W
= 800V, V
p
0
1µs
/ T)
0.05
0.02
0.01
0.2
0.1
D=0.5
*) E
due to diode recovery.
on
10µs
and E
single pulse
R
GE
50
G
t
p
,
= +15V/0V, I
,
j
GATE RESISTOR
100µs
ts
= 150 C,
PULSE WIDTH
include losses
SGB02N120
100
R
0.66735
0.70472
0.62778
R , ( K / W )
1ms
1
C
1
=
C
Rev. 2_3
1
/ R
= 2A,
10ms 100ms
1
150
C
0.04691
0.00388
0.00041
2
=
, ( s )
2
/R
E
R
2
E
E
Jan 07
off
2
on
ts
*
*
1s