SGP02N120 Infineon Technologies, SGP02N120 Datasheet - Page 2

• Manufacturer Part Number: SGP02N120
• Description: IGBT NPT 1200V 6.2A 62W TO220-3
• Manufacturer: Infineon Technologies

Specifications of SGP02N120

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SGP02N120XK

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
collector connection. PCB is vertical without blown air.
2)
Power Semiconductors
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
t h J A
i s s
o s s
r s s
G a t e
SGD02N120,
V
V
T
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
V
10 0 V V
T
C
j
j
j
j
j
G E
G E
C E
C E
C E
C E
G E
C C
G E
G E
=2 5 C
=1 5 0 C
= 10 0 A , V
=2 5 C
=1 5 0 C
PG-TO-252-3-11
PG-TO-220-3-1
PG-TO-262-3-1
2
= 0V , I
= 12 0 0V , V
= 0V , V
= 20 V , I
= 25 V ,
= 0V ,
= 96 0 V, I
= 15 V
= 15 V ,t
= 15 V , I
Conditions
1 5 0 C
Conditions
C C
2
(one layer, 70 m thick) copper area for
C
G E
S C
= 1 00 A
C
12 0 0 V,
C E
=2 0 V
= 2 A
C
C
=2 A
G E
= 2 A
10 s
= V
= 0V
G E
1200
min.
2.5
-
-
-
-
-
-
3
-
-
-
-
SGP02N120
Max. Value
SGI02N120
Value
typ.
205
2.0
3.1
3.7
1.5
62
50
20
12
11
24
4
7
-
-
-
-
Rev. 2.3
max.
100
100
250
3.6
4.3
25
25
14
5
-
-
-
-
-
Sep. 07
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A