SKB06N60HS Infineon Technologies, SKB06N60HS Datasheet
SKB06N60HS
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SKB06N60HS Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 for target applications http://www.infineon.com/igbt Marking C off j 150 C K06N60HS 6A 80µJ Symbol jmax jmax <1µs, D<0.05 SKB06N60HS G PG-TO-263-3-2 Package PG-TO-263-3-2 Value 600 -55...+150 175 245 Rev. 2 Unit Oct.07 ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Symbol Conditions Symbol Conditions (one layer thick) copper area for 2 SKB06N60HS Max. Value Unit 1.85 K/W 4 Value Unit min. Typ. max. 600 - - V 2.8 3.15 3.5 4.00 1.5 2.05 - 1.55 2. 2000 - - 100 350 Rev. 2.3 Oct.07 ...
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... Energy losses include E “tail” and diode reverse recovery 0Ω Energy losses include E “tail” and diode reverse recovery SKB06N60HS Value Unit min. typ. max 196 - 0.09 - 0.19 - 100 220 315 A/ s Value Unit min. typ. max 0. 0.08 - ...
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... Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Power Semiconductors SKB06N60HS - 150 123 - 500 280 A/ s Rev. 2.3 Oct.07 ...
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... Figure 3. Power dissipation as a function of case temperature (T 150 C) j Power Semiconductors 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 10A 5A 0A 25°C 125°C Figure 4. Collector current as a function of 5 SKB06N60HS 10V 100V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° CASE TEMPERATURE C ...
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... Figure 7. Typical transfer characteristic (V =10V) CE Power Semiconductors V 15A 10A Figure 6. Typical output characteristic 5,5V 25°C -55°C 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50° Figure 8. Typical collector-emitter 6 SKB06N60HS =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150° =12A =3A C 0°C 50°C 100° ...
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... Figure 10. Typical switching times as a =50Ω, G 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =400V, =50Ω SKB06N60HS t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =400V, V =0/15V, I =6A, ...
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... 0 0. 150°C 1µ s Figure 16. IGBT transient thermal resistance =400V, =50Ω SKB06N60HS *) Eon include losses due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =400V, V =0/15V, I =6A Dynamic test circuit in Figure 0.705 0.0341 0.561 3.74E-3 0.583 3.25E-4 ...
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... V Figure 18. Typical capacitance as a function 70A 60A 50A 40A 30A 20A 10A 0A 13V 14V 10V Figure 20. Typical short circuit collector =25° SKB06N60HS 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE 12V 14V 16V 18V GATE EMITETR VOLTAGE ...
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... F Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R Dynamic test circuit in Figure E) 10 SKB06N60HS I =12A =3A F 400A/µs 600A/µs 800A/µs DIODE CURRENT SLOPE =400V, T =150° ...
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... P Power Semiconductors 2,0V 1,8V 1,6V 1,4V 1,2V -50°C 1,5V Figure 26. Typical diode forward voltage 7.25*10 -3 6.44*10 -4 7.13*10 -5 7.16* 10ms 100ms 1s 11 SKB06N60HS I 12A =3A F 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J function of junction temperature Rev. 2.3 Oct.07 ...
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... Power Semiconductors PG-TO-263-3-2 12 SKB06N60HS Rev. 2.3 Oct.07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Power Semiconductors SKB06N60HS i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =60nH =40pF. Rev. 2.3 Oct.07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SKB06N60HS 14 Rev. 2.3 Oct.07 ...