IGA03N120H2 Infineon Technologies, IGA03N120H2 Datasheet - Page 4

• Manufacturer Part Number: IGA03N120H2
• Description: IGBT 1200V 3A 29W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IGA03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 3A
• Power - Max: 29W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 29W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: -
• Ic(max) @ 100°: 3.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
12A
10A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
8A
6A
4A
2A
0A
30W
20W
10W
GE
10Hz
j
0W
j
2 5°C
= +15V/0V, R
150 C, D = 0.5, V
150 C)
100Hz
f,
T
50°C
SWITCHING FREQUENCY
C
,
CASE TEMPERATURE
T
T
G
C
C
=25°C
=100°C
= 82 )
7 5°C
1kHz
I
c
CE
= 800V,
100°C
10kHz
I
c
12 5°C
100kHz
150°C
4
Figure 4. Collector current as a function of
case temperature
(V
0,01A
0,1A
8A
6A
4A
2A
0A
10A
GE
1A
25 °C
Figure 2. Safe operating area
(D = 0, T
1V
V
15V, T
CE
,
COLLECTOR
50°C
T
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
IGA03N120H2
j
100V
100°C
150 C)
Rev. 2.2
12 5°C
1000V
100m s
t
p
100 s
=10 s
150°C
July 06
20 s
50 s
1m s
D C