IGB03N120H2 Infineon Technologies, IGB03N120H2 Datasheet - Page 9

• Manufacturer Part Number: IGB03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO263-3
• Manufacturer: Infineon Technologies

Specifications of IGB03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-263
• No.: RoHS Compliant
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
800V
600V
400V
200V
0V
Figure 21. Typical turn off behavior, soft
switching
(V
Dynamic test circuit in Figure E)
GE
0.0
=15/0V, R
0.4
0.8
t
p
,
G
PULSE WIDTH
1.2
=82Ω, T
1.6
2.0
j
= 150 C,
2.4
2.8
3A
2A
1A
0A
9
IGB03N120H2
Rev. 2.4 Oct. 07