IKB15N60T Infineon Technologies, IKB15N60T Datasheet - Page 7

• Manufacturer Part Number: IKB15N60T
• Description: IGBT 600V 30A 130W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB15N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 130W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
1 .6m J
1 .2m J
0 .8m J
0 .4m J
0 .0m J
0.9mJ
0.8mJ
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
25°C
0 A
E
E
E
on
ts
*) E
off
*) E
*
*
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
d u e to d io de re c ov e ry
due to diode recovery
50°C
J
I
CE
on
GE
5 A
,
on
C
,
JUNCTION TEMPERATURE
and E
= 400V, V
an d E
= 0/15V, I
COLLECTOR CURRENT
75°C 100°C 125°C 150°C
1 0 A
ts
ts
include losses
in c lu d e lo s s es
C
GE
1 5A
= 15A, R
= 0/15V, R
J
CE
= 175°C,
= 400V,
20 A
G
= 15Ω,
G
= 15Ω,
25 A
E
E
E
7
TrenchStop
ts
on
off
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
1.6 mJ
1.4 mJ
1.2 mJ
1.0 mJ
0.8 mJ
0.6 mJ
0.4 mJ
0.2 mJ
1.2m J
1.0m J
0.8m J
0.6m J
0.4m J
0.2m J
0.0m J
300V
®
V
E
E
Series
E
CE
ts
off
on
*) E
*) E
*
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*
,
due to diode recovery
E
due to diode recovery
CE
COLLECTOR
GE
off
on
on
= 400V, V
= 0/15V, I
R
E
and E
and E
350V
G
on
,
*
GATE RESISTOR
ts
ts
include losses
include losses
-
EMITTER VOLTAGE
C
GE
IKB15N60T
400V
= 15A, R
= 0/15V, I
J
J
= 175°C,
= 175°C,
Rev. 2.5 Oct. 07
G
450V
= 15Ω,
C
= 15A,
E
ts
*
q