IKP03N120H2 Infineon Technologies, IKP03N120H2 Datasheet - Page 4

• Manufacturer Part Number: IKP03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP03N120H2

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 9.6 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Parameter
IGBT Characteristic
Turn-off energy
Power Semiconductors
Switching Energy ZVT, Inductive Load
E
Symbol
o f f
V
I
V
R
C
T
T
C
j
j
C C
G E
G
r
= 3 A,
=2 5 C
=1 5 0 C
2 )
= 82 ,
4
= 80 0 V,
= 15 V /0 V ,
=4 nF
Conditions
min.
-
-
IKW03N120H2
IKP03N120H2
Value
0.05
0.09
typ.
Rev. 2.4
max.
-
-
Sept. 07
Unit
mJ