IKA03N120H2 Infineon Technologies, IKA03N120H2 Datasheet
IKA03N120H2
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IKA03N120H2 Summary of contents
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... Isolation Voltage 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking C off j 0.15mJ K03H1202 PG-TO-220-3-31 150 C 0.15mJ K03H1202 PG-TO-220-3-34 150 C Symbol V = 15V jmax IKA03N120H2 G PG-TO220-3-31 PG-TO220-3-34 (FullPAK) (FullPAK) Package Value 1200 9.6 3 -40...+150 260 2500 Rev. 2 Unit ...
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... Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Power Semiconductors Symbol Conditions Symbol Conditions IKA03N120H2 Max. Value Unit 4.3 K/W 5.8 62 Value Unit min. Typ. max. 1200 - - V - 2.2 2 1.6 - 2 100 205 - 8 Rev. 2.2 July 06 ...
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... =150 C j Symbol Conditions Energy losses include “tail” and diode t s reverse recovery IKA03N120H2 Value Unit min. typ. max 281 - - 0.23 - µ 723 - A/ s Value Unit min. typ. max 340 - - 112 - ns - 0.52 - µ ...
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... Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Power Semiconductors Symbol Conditions IKA03N120H2 Value Unit min. typ. max 0. 0.09 - Rev. 2.2 July 06 ...
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... V Figure 2. Safe operating area ( °C 12 5°C 150°C Figure 4. Collector current as a function of case temperature ( IKA03N120H2 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 12 5° CASE TEMPERATURE C 15V, T 150 C) j Rev. 2.2 ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors 10A Figure 6. Typical output characteristics (T = 150 -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IKA03N120H2 V =15V G E 12V 10V COLLECTOR EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150° JUNCTION TEMPERATURE j Rev ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IKA03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100° ...
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... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IKA03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...
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... K/W 0,000595 0,000126 0,000018 K 10s Figure 22. Typical Diode transient thermal impedance as a function of pulse width (D=t 9 IKA03N120H2 U =240V CE U =960V CE 10nC 20nC Q , GATE CHARGE GE D=0.5 0.2 0 0.9734 4.279 1.452 1.094 0.6213 4.899*10 0.7174 3.081*10 0.7037 4.341*10 0.05 ...
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... Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V =800V Dynamic test circuit in Figure E) 10 IKA03N120H2 T =150° =25°C J 100Ohm 200Ohm 300Ohm R , GATE RESISTANCE G =3A =150°C ...
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... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 3.0V I = 2.0V 1.5V T =25°C J 1.0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IKA03N120H2 =2A =1A 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 2.2 July 06 ...
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... D 2.95 typ. E 3.15 F 6.05 G 8.28 H 3.18 K 0.45 L 1.23 M 2.54 typ. N 4.57 P 2.57 T 2.51 U 5.00 typ. 12 IKA03N120H2 dimensions [mm] [inch] max min max 10.63 0.4084 0.4184 16.12 0.6245 0.6345 0.78 0.0256 0.0306 0.1160 typ. 3.25 0.124 0.128 6.56 0.2384 0.2584 13.73 0.5304 0.5404 3 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKA03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKA03N120H2 14 Rev. 2.2 July 06 ...