SGB20N60 Infineon Technologies, SGB20N60 Datasheet
SGB20N60
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SGB20N60 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 20A 2.4V G20N60 150 C Symbol jmax - SGB20N60 G PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Value 600 115 179 -55...+150 245 Rev. 2.2 ...
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... Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SGB20N60 Max. Value 0.7 40 Value min. Typ. max. 600 - = 1.7 2 2.4 - 2.4 2 2500 = 100 = 1100 1320 - 107 128 - 100 130 200 10 s Rev. 2.2 Unit K/W Unit - Nov 06 ...
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... Energy losses include E “tail” and diode reverse recovery =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB20N60 Value Unit min. typ. max 225 270 - 0.44 0. 0.33 0.43 - 0.77 0.96 Value Unit min. typ. max 250 300 - 0.67 ...
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... V CE Figure 2. Safe operating area ( 50A 40A 30A 20A 10A 0A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V SGB20N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125°C T ...
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... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB20N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 40A 20A C 0°C 50°C 100°C 150° ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.7mA SGB20N60 t d(off d(on GATE RESISTOR G = 150 400V 20A, C 0°C 50° ...
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... K/W 0. 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB20N60 *) E and E include losses on ts due to diode recovery off GATE RESISTOR G = 150 400V 20A 0.1882 ...
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... GE 350A 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB20N60 C iss C oss C rss 10V 20V 30V - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V , - GATE EMITTER VOLTAGE ...
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... PG-TO263-3-2 9 SGB20N60 Rev. 2.2 Nov 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SGB20N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =900pF. Rev. 2.2 Nov 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGB20N60 11 Rev. 2.2 Nov 06 ...