SKB15N60 Infineon Technologies, SKB15N60 Datasheet - Page 10

• Manufacturer Part Number: SKB15N60
• Description: IGBT NPT 600V 31A 139W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB15N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 31A
• Power - Max: 139W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 31 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 31.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB15N60XT

Figure 25. Typical diode forward current as
a function of forward voltage
10
10
30A
25A
20A
15A
10A
10
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
5A
0A
0.0V
-1
-2
0
K/W
K/W
K/W
1µs
p
0.05
0.02
/ T)
D=0.5
0.2
0.1
single pulse
0.01
-55°C
10µs
0.5V
V
F
,
t
FORWARD VOLTAGE
p
25°C
,
100µs
PULSE WIDTH
100°C
150°C
1.0V
R
0.311
0.271
0.221
0.584
0.314
R , ( 1 / W )
1ms
1
C
1
=
1
/ R
10ms 100ms
1
1.5V
C
7.83*10
1.21*10
1.36*10
1.53*10
2.50*10
2
=
, ( s )
2
/R
R
2
-2
-2
-3
-4
-5
2
2.0V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
2.0V
1.5V
1.0V
-40°C
T
j
,
JUNCTION TEMPERATURE
0°C
I
40°C
F
= 30A
SKB15N60
80°C 120°C
Rev. 2.2
I
F
= 15A
Oct. 07