SKB15N60HS Infineon Technologies, SKB15N60HS Datasheet
SKB15N60HS
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SKB15N60HS Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 for target applications http://www.infineon.com/igbt Marking C off j 150 C K15N60HS 15A 200µJ Symbol jmax jmax <1µs, D<0.05 SKB15N60HS G PG-TO263-3-2 Package PG-TO263-3-2 Value 600 138 -55...+150 175 245 Rev 2 Unit Oct. 07 ...
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... PCB is vertical without blown air. Power Semiconductors Symbol Conditions Symbol Conditions (one layer thick) copper area for 2 SKB15N60HS Max. Value Unit 0.9 K/W 1 Value Unit min. Typ. max. 600 - - V 2.8 3.15 3.5 4.00 1.5 2.0 - 1.5 2 2000 - - 100 Rev 2.3 Oct. 07 ...
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... Leakage inductance Stray capacity C due to test circuit in Figure E. Power Semiconductors = Symbol Conditions Ω Energy losses include E “tail” and diode reverse recovery SKB15N60HS - 810 pF - 123 - 135 A Value Unit min. typ. max 209 - 0.21 - 0.53 - 111 580 520 A/ s Rev 2.3 Oct. 07 ...
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... Symbol Conditions Ω Energy losses include E “tail” and diode reverse recovery 3Ω Energy losses include E “tail” and diode reverse recovery SKB15N60HS Value Unit min. typ. max 0. 0. 235 - 0.30 - 0.78 - 184 155 - 1320 360 A/ s Rev 2.3 Oct. 07 ...
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... C) j Power Semiconductors 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 5 SKB15N60HS 10V 100V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° CASE TEMPERATURE ...
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... CE Power Semiconductors 40A 30A 20A 10A Figure 6. Typical output characteristic 5,5V 25°C 150°C 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50° Figure 8. Typical collector-emitter 6 SKB15N60HS V =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150° 0°C 50°C 100°C ...
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... G t d(off) 5.0V 4.5V 4.0V 3.5V 3. 1.5V d(on) -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =400V, =23Ω SKB15N60HS t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =400V, V =0/15V, I =15A Dynamic test circuit in Figure E) 0°C 50° ...
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... K/W 1µs 100°C 150°C Figure 16. IGBT transient thermal resistance =400V, =23Ω SKB15N60HS *) Eon include losses due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =400V, V =0/15V, I =15A Dynamic test circuit in Figure E) D=0.5 0.2 0.1 ...
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... V Figure 18. Typical capacitance as a function 250A 200A 150A 100A 50A 0A 13V 14V 10V Figure 20. Typical short circuit collector =25° SKB15N60HS 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE 12V 14V 16V 18V GATE EMITETR VOLTAGE ...
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... Figure 22. Typical reverse recovery charge I =15A F -300A/µs I =7.5A F -200A/µs -100A/µs 800A/µs -0A/µs Figure 24. Typical diode peak rate of fall of 10 SKB15N60HS I 400A/µs 600A/µs 800A/µs di /dt, DIODE CURRENT SLOPE function of diode current slope (V =400V, T =150°C, ...
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... Figure 26. Typical diode forward voltage 7.83*10 -2 1.21*10 -3 1.36*10 -4 1.53*10 -5 2.50* 10m s 100m SKB15N60HS I =30A F I =15A F I =7.5A F 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J function of junction temperature Rev 2.3 Oct. 07 ...
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... Power Semiconductors SKB15N60HS PG-TO263-3-2 12 Rev 2.3 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Power Semiconductors SKB15N60HS i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =60nH =40pF. Rev 2.3 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SKB15N60HS 14 Rev 2.3 Oct. 07 ...