SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 5

• Manufacturer Part Number: SGI02N120
• Description: IGBT NPT 1200V 6.2A 62W TO262-3
• Manufacturer: Infineon Technologies

Specifications of SGI02N120

• Package / Case: TO-262-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGI02N120XK

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
7A
6A
5A
4A
3A
2A
1A
0A
7A
6A
5A
4A
3A
2A
1A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
CE
T
1V
V
V
j
,
=-40°C
GE
GE
T
COLLECTOR
j
=+25°C
=17V
T
,
5V
15V
13V
11V
j
GATE
=+150°C
9V
7V
2V
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
SGB02N120, SGD02N120
Preliminary
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 6. Typical output characteristics
(T
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
GE
COLLECTOR
j
,
=17V
JUNCTION TEMPERATURE
0°C
15V
13V
11V
9V
7V
2V
SGP02N120
3V
-
50°C
EMITTER VOLTAGE
4V
100°C
5V
6V
150°C
I
I
I
C
C
C
=4A
=1A
=2A
Mar-00
7V