IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 14
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IKW03N120H2
Manufacturer Part Number
IKW03N120H2
Description
IGBT 1200V 9.6A 62.5W TO247-3
Manufacturer
Infineon Technologies
Datasheet
1.IKW03N120H2.pdf
(15 pages)
Specifications of IKW03N120H2
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
9.6A
Power - Max
62.5W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
3A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
62.5W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
9.6 A
Ic(max) @ 100°
3.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
14
i,v
p(t)
V
DC
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L = 180nH,
Stray capacitor C = 40pF,
Relief capacitor C
ZVT switching)
F
r
1
di /dt
1
r
F
I
1
r r m
(Diode)
R
DUT
½ L
G
öö
½ L
IKW03N120H2
IKP03N120H2
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r
r r
r r
Rev. 2.5 Sept. 08
= 4nF (only for
t
r r
S
Q
S
+
(IGBT)
90% I
F
DUT
t
+
L
F
Q
t
F
F
r r m
r
di
C
10% I
n
n
r r
r
n
/dt
r r m
C
r
V
T
t
R
C